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TC55V16256FTI-12 Datasheet, Toshiba Semiconductor

TC55V16256FTI-12 Datasheet, Toshiba Semiconductor

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TC55V16256FTI-12 cmos equivalent

  • mos digital integrated circuit silicon gate cmos.
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TC55V16256FTI-12 Features and benefits

TC55V16256FTI-12 Features and benefits


* Fast access time (the following are maximum values) TC55V16256JI/FTI-12:12 ns TC55V16256JI/FTI-15:15 ns Low-power dissipation (the following are maximum values) Cyc.

TC55V16256FTI-12 Application

TC55V16256FTI-12 Application

where high-speed access and high-speed storage are required. All inputs and outputs are directly LVTTL compatible. The T.

TC55V16256FTI-12 Description

TC55V16256FTI-12 Description

The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power.

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TAGS

TC55V16256FTI-12
MOS
DIGITAL
INTEGRATED
CIRCUIT
SILICON
GATE
CMOS
Toshiba Semiconductor

Manufacturer


Toshiba (https://www.toshiba.com/) Semiconductor

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