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TC55V16256FTI-12 Datasheet

Manufacturer: Toshiba
TC55V16256FTI-12 datasheet preview

Datasheet Details

Part number TC55V16256FTI-12
Datasheet TC55V16256FTI-12_ToshibaSemiconductor.pdf
File Size 223.48 KB
Manufacturer Toshiba
Description MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55V16256FTI-12 page 2 TC55V16256FTI-12 page 3

TC55V16256FTI-12 Overview

The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power supply. Chip enable ( CE ) can be used to place the device in a low-power mode, and output enable ( OE ) provides fast memory access.

TC55V16256FTI-12 Key Features

  • Fast access time (the following are maximum values) TC55V16256JI/FTI-12:12 ns TC55V16256JI/FTI-15:15 ns Low-power dissip
  • Standby:10 mA (both devices)
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