• Part: TC55V16256FTI-12
  • Description: MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  • Manufacturer: Toshiba
  • Size: 223.48 KB
TC55V16256FTI-12 Datasheet (PDF) Download
Toshiba
TC55V16256FTI-12

Overview

  • Fast access time (the following are maximum values) TC55V16256JI/FTI-12:12 ns TC55V16256JI/FTI-15:15 ns Low-power dissipation (the following are maximum values) Cycle Time Operation (max) 12 230 15 200 20 170 25 150 ns mA * * * * * *
  • Standby:10 mA (both devices) Single power supply voltage of 3.3 V ± 0.3 V Fully static operation All inputs and outputs are LVTTL compatible Output buffer control using OE Data byte control using LB (I/O1 to I/O8) and UB (I/O9 to I/O16) Package: SOJ44-P-400-1.27 (JI) (Weight: 1.64 g typ) TSOP II44-P-400-0.80 (FTI) (Weight: 0.45 g typ)